The 153th Topical Symposium of the Magnetic Society of Japan / The 15th Topical symposium of Spin-electronics
Progress in MTJ and its future application for Spin-electronics devices Development of new materials such as crystalline MgO tunneling barrier and half metallic materials provides magnetic tunneling junction (MTJ) with extremely high magnetoresistaice ratio. The appearance of these high quality MTJs accelerated not only the development of new spin-electronics devices such as MRAM and Spin-RAM, but also the research on the interaction between spin current and localized magnetic moments. In this symposium, we will focus on the recent research on MTJs and their application to the spin-electronics devices. We will also discuss new spin-electronics phenomena for the future devices. We have invited a number of active researchers in this field. […]