The 168th Topical Symposium of the Magnetic Society of Japan / The 26th Topical symposium of Spin-electronics

Recent Studies on Spin Current and Its Application

A new concept on “Spin Current” has been introduced in Spintronics field, since physical phenomena of spin injection and spin accumulation play an important role against the charge current. Recently, interaction between magnetics and electric current as well as controlling spin current are concerned with new cooperative applications and devices such as MRAM, spin transistor, spin-torque oscillator, spin dice, and so on. In this joint symposium, researchers actively working in this field will give talks on their latest results and discuss the spin current and its application. We very much look forward to your participation.

Date: November 2 , 2009 (Monday) , 10:30-17:30
Venue: Lecture Hall, 1st floor, IMR Bldg.II, Institute for Materials Research, Tohoku University
2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
(10 min by Taxi from JR Sendai Station)
In cooperation with: IEEE Mag.Soc.Japan Chapter, The Japan Institute of Metals, IEE of Japan, IEICE, The Physical Society of Japan, The Japan Society of Applied Physics, Grant-in-Aid for Scientific Research in Priority Areas “Creation and Control of Spin Current” from MEXT
Admission fee: Free (reserved reader and student)
2,000 Yen (member and corporate member)
4,000Yen (non-member)
Textbook: 1,000 Yen (member, corporate member, non-member and student)
Further information: please contact The Magnetics Society of Japan.
TEL. 03-5281-0106
URL: http://www.wdc-jp.com/msj/intro/office.html
Organizers: M. Doi (Tohoku Univ.), K. Takanashi (Tohoku Univ.), Y. Otani (Tokyo Univ.), T. Nagahama (AIST)

Program

Chairperson: K. Takanashi (Tohoku Univ.)
10:30-11:10 “Electric Current and Spin Current -How to extend Electromagnetism-”
S. Maekawa (Tohoku Univ.)
11:10-11:50 “Electrical Control of Spins toward Spin FET”
J. Nitta (Tohoku Univ.)
Lunch 11:50-13:00
Chairperson: T. Nagahama (AIST)
13:00-13:40 “Spin-Functional MOSFETs for Integrated Electronics”
S. Sugahara (Tokyo Inst. Tech.)
13:40-14:20 “Microwave Oscillation Induced by Spin-Torque for Nano-Confined Domain Wall Spin-Valve Devices”
M. Doi (Tohoku Univ.)
Coffee Break 14:20-14:35
Chairperson: Y. Otani (Tokyo Univ.)
14:35-15:15 “Spin-Torque-Induced RF Oscillation for MgO-MTJs and CPP-GMR Devices ~ Large output power and high oscillation frequency ~”
T. Seki (Osaka Univ.)
15:15-15:55 “”Spin Dice” Physical Random Number Generator using Spin Transfer Switching”
A. Fukushima (AIST)
Coffee Break 15:55-16:10
Chairperson: M. Doi (Tohoku Univ.)
16:10-16:50 “Good Scalability of Perpendicular MTJ for High Density MRAM”
H. Yoda (Toshiba)
16:50-17:30 “Perpendicular Domain Wall Motion MRAM for SoC Embedding Application”
N. Ishiwata (NEC)

*Audio and/or visual recording is prohibited.